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Permanent research position

Permanent researcher position in experimental solid-state physics with a focus on semiconductor spin qubits


The Quantum Photonics, Electronics and Engineering Laboratory PHELIQS, a joint research unit of the CEA Fundamental Research Division in Grenoble (CEA-IRIG) and Université Grenoble Alpes (UGA), is hiring a permanent researcher in experimental solid-state physics with a focus on semiconductor spin qubits. PHELIQS is currently developing a large panel of experimental approaches for quantum technologies, including spin qubits, within the LaTEQS team. The successful candidate is expected to take active part in the development of germanium-based hole spin qubits and, more specifically, to be in charge of their design, fabrication, and measurement. This research topic is part of the ambitious French “Quantum Plan”, in which Pheliqs is deeply involved thanks to its expertise in silicon device technology, cryoelectronics, cryogenics, and nanofabrication at the Upstream Technological Platform at CEA-IRIG. The candidate is expected to develop her/his own project in close synergy with the LaTEQS team, establish and manage research collaborations with academic and industrial partners, including other groups within CEA and outside. The candidate will supervise the research activity of students and post-docs. A strong team spirit is therefore required.

Realisation of a double quantum dot in Ge with two gate layers
Realisation of a double quantum dot in Ge with two gate layers







Find the complete offer here.



Post-doc positions

Germanium-based qubits


A 3-year post-doctoral research position (f/m/d) is available at the LaTEQS laboratory of CEA in Grenoble.The experimental researcher will join an existing team (3PhDs,3staff, 3 staff researchers,2engineers) focusing on the development of novel quantumq electronics based on Ge/Si heterostructures.This emerging material,which embeds high-mobility mobilitymobility two-dimensionalhole gas,has been identified as a promising candidate for spin qubits and hybrid superconductor-semiconductor qubits [1]. Along this line, we have already obtained some first encouraging results, such as the demonstration of ballistic hole transport over long distances[2] and the realization of Josephson field-effect transistors and gate tunable SQUIDs[3].

Example of a two-layer gate strucuture defining a hole quantum dotvin a Ge / SiGe heterostructure.
Example of a two-layer gate structure defining a hole quantum dot in a Ge/SiGe heterostructure. This structure was fabricated in our cleanroom. Scale bar: 100nm

[1] G. Scrappuci, et al. Nature Reviews Materials 6, 926-943(2021)
[2] 2. R Mizokuchi , et al. Nanoletters 18, 4861-4865 (2018)
[3] F. Vigneau et al. Nanoletters 19, 1023-1027 (2019)


Find the complete offer here.