Dispersively Probed Microwave Spectroscopy of a Silicon Hole Double Quantum Dot

Owing to ever increasing gate fidelities and to a potential transferability to industrial CMOS technology, silicon spin qubits have become a compelling option in the strive for quantum computation. In a scalable architecture, each spin qubit will have to be finely tuned and its operating conditions accurately determined. In view of this, spectroscopic tools compatible with a scalable device layout are of primary importance. Here we report a two-tone spectroscopy technique providing access to the spin-dependent energy-level spectrum of a hole double quantum dot defined in a split-gate silicon device. A first gigahertz-frequency tone drives electric dipole spin resonance enabled by the valence-band spin-orbit coupling. A second lower-frequency tone (approximately 500MHz) allows for dispersive readout via rf-gate reflectometry. We compare the measured dispersive response to the linear response calculated in an extended Jaynes-Cummings model and we obtain characteristic parameters such as g factors and tunnel and spin-orbit couplings for both even and odd occupation.






Read more in Ezzouch et al. PhysRevApplied 16 034031 (2022)






Electrical Spin Driving by g-Matrix Modulation in Spin-Orbit Qubits

A collaboration with CEA-Leti (Grenoble)

In a semiconductor spin qubit with sizable spin-orbit coupling, coherent spin rotations can be driven by a resonant gate-voltage modulation. Recently, we have exploited this opportunity in the experimental demonstration of a hole spin qubit in a silicon device. Here we investigate the underlying physical mechanisms by measuring the full angular dependence of the Rabi frequency, as well as the gate-voltage dependence and anisotropy of the hole g factor. We show that a g-matrix formalism can simultaneously capture and discriminate the contributions of two mechanisms so far independently discussed in the literature: one associated with the modulation of the g factor, and measurable by Zeeman energy spectroscopy, the other not. Our approach has a general validity and can be applied to the analysis of other types of spin-orbit qubits.
Read more in A. Crippa et al. Phys. Rev. Lett. 120, 137702 (2018)






Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon

A collaboration with Institut Néel (Grenoble) and CEA-Leti (France)

Gate reflectometry map.
Silicon spin qubits have emerged as a promising path to large-scale quantum processors. In this prospect, the development of scalable qubit readout schemes involving a minimal device overhead is a compelling step. Here we report the implementation of gate-coupled rf reflectometry for the dispersive readout of a fully functional spin qubit device. We use a p-type double-gate transistor made using industry-standard silicon technology. The first gate confines a hole quantum dot encoding the spin qubit, the second one a helper dot enabling readout. The qubit state is measured through the phase response of a lumped-element resonator to spin-selective interdot tunneling. The demonstrated qubit readout scheme requires no coupling to a Fermi reservoir, thereby offering a compact and potentially scalable solution whose operation may be extended above 1 K.
Read more in A. Crippa et al. Nature Comm. 10, 2776 (2019)